Part Number
|
FNK55H12 |
Manufacturer
|
FNK |
Description
|
N-Channel Power MOSFET |
Published
|
Mar 23, 2018 |
Detailed Description
|
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK3205 uses advanced trench technology and design to provid...
|
Datasheet
|
FNK55H12
|
Overview
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK3205 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
FNK3205/55H12
General Features
● VDS =55V,ID =120A RDS(ON) 5.
5mΩ @ VGS=10V
(Typ:4.
1mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
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