FNK6003 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
General Features ● VDS =60V, ID = 3A RDS(ON) 105m Ω @ VGS =10V RDS(ON) 125m Ω @ VGS=4.
5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package D G S Schematic diagram Application ●Battery protection ●Load switch ●Power management SOT-23 top view Marking and pin assignment Package Marking and Ordering Information Device Marking Device Device Pack...

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