FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
FNK6075 General Features ● VDS =60V,ID =75A RDS(ON) 9.
4m Ω @ VGS=10V (Typ:7.
5? mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible Power Supply Schematic diagram To-220 Top View P...

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