FNK3416 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V.
This device is suitable for use as a load switch or in PWM applications .
It is ESD protested.
General Features ● VDS = 20V,ID =6A RDS(ON) 28mΩ @ VGS=2.
5V RDS(ON) 22mΩ @ VGS=4.
5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Marking and pin assignment Application ● PWM application ● Load switch SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package 3...

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