FNK5530PD FNK P-Channel Enhancement Mode Power MOSFET Description The FNK55P30PD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =-55V,ID =-30A RDS(ON) 40mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply TO-252-2L top view Package Marking and Ordering Information Device Marking Dev...

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