60V N-Channel MOSFET Description The FNK 3206T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in automotive applications and a wide variety of other applications.
Features ● VDS=60V; ID=210A@ VGS=10V; RDS(ON) 3 mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation FNK3206T Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply TO-247 top view Absolute Maximum Ratings TA=25°C unless otherwise noted P...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)