Part Number
|
C3M0120100J |
Manufacturer
|
CREE |
Description
|
Silicon Carbide Power MOSFET |
Published
|
Mar 23, 2018 |
Detailed Description
|
VDS 1000 V
C3M0120100J
ID @ 25˚C
22 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 120 ...
|
Datasheet
|
C3M0120100J
|
Overview
VDS 1000 V
C3M0120100J
ID @ 25˚C
22 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 120 mΩ
N-Channel Enhancement Mode
Features
Package
• C3MTM SiC MOSFET technology • Low parasitic inductance with separate driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low On-resistance • Fast intrinsic diode with low reverse recovery (Qrr) • Low output capacitance (60pF) • Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency
TAB Drain
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