Power
Transistors
2SB1317
Silicon
PNP triple diffusion planar type
For high power amplification Complementary to 2SD1975
s Features
q Satisfactory foward current transfer ratio hFE vs.
collector current IC characteristics
q Wide area of safe operation (ASO)
q High transition frequency fT q Optimum for the output stage of a HiFi audio amplifier
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCEO VEBO ICP IC
PC
–180 –180 –5 –25 –15 150 3.
5
Junction temperature Storage temperature
Tj 150 Tstg –55...