MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BD777/D
Plastic Darlington Complementary Silicon Power
Transistors
.
.
.
designed for general purpose amplifier and high–speed switching applications.
• High DC Current Gain hFE = 1400 (Typ) @ IC = 2.
0 Adc • Collector–Emitter Sustaining Voltage — @ 10 mAdc VCEO(sus) = 45 Vdc (Min) — BD776 VCEO(sus) = 60 Vdc (Min) — BD777, 778 VCEO(sus) = 80 Vdc (Min) — BD780 • Reverse Voltage Protection Diode • Monolithic Construction with Built–in Base–Emitter output Resistor MAXIMUM RATINGS
Rating
BD777
PNP BD776 BD778 BD780 *
*Motorola Preferred Device
NPN
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