BD809 (
NPN), BD810 (
PNP)
Plastic High Power Silicon
Transistors
These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.
Features
• High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation
@ TC = 25°C Derate above 25°C
VCEO VCBO VEBO
IC IB PD
80 80 5.
0 10 6.
0
90 0.
72
Vdc Vdc Vdc Adc Adc
W W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may dama...