DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
BDL31
NPN BISS-
transistor
Product specification Supersedes data of 1998 Aug 03 1999 Apr 28
Philips Semiconductors
Product specification
NPN BISS-
transistor
FEATURES • High current (max.
5 A) • Low voltage (max.
10 V) • Low collector-emitter saturation voltage ensures reduced power consumption.
APPLICATIONS • Battery powered units where high current and low power consumption are important.
DESCRIPTION
1
BDL31
PINNING PIN 1 2 3 4 base not connected emitter collector DESCRIPTION
handbook, halfpage
4
4
NPN BISS (Breakthrough In Small Signal)
transistor in a SOT223 plastic package.
PNP complement: BDL32.
1 Top view 2 3
MAM372
...