TIP112

Production specification NPN Epitaxial Silicon Darlington Transisor TIP112 FEATURES  Monolithic Construction With Built in Base -Emitter Shunt Resistors.  Complementary to TIP117. Pb Lead-free  High DC Current Gain:hFE=1000@VCE=4V,IC=1A.  Low Collector-Emitter Saturation Voltage.  Industrial Use. TO-220AB MAXIMUM RATING operating temperature ra...