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2SB709A

Part Number 2SB709A
Manufacturer GME
Description Silicon Epitaxial Planar Transistor
Published Apr 15, 2018
Detailed Description Production specification Silicon Epitaxial Planar Transistor FEATURES  High forward current transfer ratio hFE.  Min...
Datasheet 2SB709A




Overview
Production specification Silicon Epitaxial Planar Transistor FEATURES  High forward current transfer ratio hFE.
 Mini type package, allowing downsizing Pb Lead-free of the equipment and automatic insertion through the tape packing and the magazine packing.
2SB709A APPLICATIONS  For general amplification complementary to 2SD601A.
ORDERING INFORMATION Type No.
Marking 2SB709A BQ1/BR1/BS1 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO ICP IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak collector Current Collector Current Collector Dissipation Junction and Storage ...






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