TOSHIBA
Transistor Silicon
PNP Epitaxial Type (Darlington)
2SB1457
Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications
2SB1457
Unit: mm
• High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.
5 V (max)
(IC = −1 A, IB = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO IC (DC) IC (Pulse)
IB PC Tj Tstg
−100 −100
−8 −2 −3 −0.
5 900 150 −55 to 150
V V V...