Part Number
|
BF1012S |
Manufacturer
|
Siemens Semiconductor Group |
Description
|
Silicon N-Channel MOSFET Tetrode |
Published
|
Mar 23, 2005 |
Detailed Description
|
BF 1012S
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating volt...
|
Datasheet
|
BF1012S
|
Overview
BF 1012S
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Q62702-F1627
Pin Configuration 1=S 2=D 3 = G2 4 = G1
Package SOT-143
BF 1012S NYs
Maximum Ratings Parameter Drain-source voltage
Symbol
Value 16 25 10 3 200 -55 .
.
.
+150 150
Unit V mA V mW °C
VDS ID
±I G1/2SM +VG1SE
Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, T S ≤ 76 °C Storage temperature Channel temperature
Ptot T stg T ch
Thermal Resistance Channel -...
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