DISCRETE SEMICONDUCTORS
DATA SHEET
BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs
Product specification Supersedes data of 1997 Dec 01
1997 Dec 02
NXP Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1105; BF1105R; BF1105WR
FEATURES
Short channel
transistor with high forward transfer admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz.
Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.
PINNING
PIN 1 2 3 4
DESCRIPTION source drain gate 2 gate 1
APPLICATIONS
VHF and UHF applications with 5 V supply voltage, such as television tuners and professional communi...