Production specification
Silicon Epitaxial Planar
Transistor
FEATURES
High Collector Current.
(IC= 800mA).
Complementary To M8550.
Pb
Lead-free
Excellent HFE Linearity.
High total power dissipation.
(PC=200mW).
M8050
APPLICATIONS
High Collector Current.
.
ORDERING INFORMATION
Type No.
Marking
M8050
Y11
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
40
VCEO
Collector-Emitter Voltage
25
Units V V
VEBO
Emitter-Base Voltage
6V
IC PC Tj,Tstg
Collector Current -Continuous Collector Dissipation Junction and Storage Temperature
800 mA
200 mW
-55 to +150
℃
C152 Rev.
A
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