Part Number
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HXN0680 |
Manufacturer
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Power-IC |
Description
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Silicon N-Channel Power MOSFET |
Published
|
Apr 21, 2018 |
Detailed Description
|
Description
The HXN0680 is n-channel power trench MOSFET with latest technology. So fast switching speed and low onresis...
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Datasheet
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HXN0680
|
Overview
Description
The HXN0680 is n-channel power trench MOSFET with latest technology.
So fast switching speed and low onresistance.
Usually used at power switching application .
It is also intended for any applications with low gate drive requirements .
Features
·Latest Trench Power MOSFET technology
·Low On-state Resistance
·High Current Density
·Low Gate Charge
·100% UIS Test
Product Summery
BVDS 60V
RDSON 6.
5mΩ
ID 80A
Applications
·Moter Driver ·Power Management
1、Absolute maximum ratings
Symbol VDS VGS ID(1) IDM(2)
Parameter Drain-source voltage (VGS = 0)
Gate-source voltag Drain current (continuous) at TC = 25°C
Drain current (pulsed)
1/3
Value 60 ±25 80 320
Unit V V A A
PD EAS(3...
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