INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SC4421
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 500V(Min.
) ·Wide Area of Safe Operation ·High Speed Switching
APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500 V
VCES
Collector-Emitter Voltage
500 V
VCEO Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
3A
ICM Collector Current-Peak
6A
IB Base Current-Continuous
Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃
Tj Junction Temperature
Tstg Storage ...