BLF8G10LS-270V; BLF8G10LS-270GV
Power LDMOS
transistor
Rev.
2 — 1 September 2015
Product data sheet
1.
Product profile
1.
1 General description
270 W LDMOS power
transistor with improved video bandwidth for base station applications at frequencies from 790 MHz to 960 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device.
Test signal
f
VDS
PL(AV)
Gp
D ACPR5M
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
869 to 894
28 67
19.
5 31 37[1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.
4 dB at 0.
01 % probability on CCDF; carrier spacing 10 MHz.
1.
2 Features and benefits
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