BLA8G1011L(S)-300; BLA8G1011L(S)-300G
Power LDMOS
transistor
Rev.
4 — 4 August 2016
Product data sheet
1.
Product profile
1.
1 General description
300 W LDMOS power
transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.
Table 1.
Test information
Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Test signal
f
VDS
PL
Gp
D
(MHz)
(V)
(W) (dB)
(%)
tr (ns)
pulsed RF
1060
32 300 16.
5 56 14
tf (ns) 5
1.
2 Features and benefits
Easy power control Integrated ESD protection Enhanced ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1030 MHz to 1090 MHz) Internally matched for ea...