BLF182XR; BLF182XRS
Power LDMOS
transistor
Rev.
3 — 3 February 2016
Product data sheet
1.
Product profile
1.
1 General description
A 250 W extremely rugged LDMOS power
transistor for broadcast and industrial applications in the HF to 600 MHz band.
Table 1.
Application information
Test signal
f
(MHz)
pulsed RF
108
CW 81.
36
VDS
PL
(V) (W)
50 250
50 235
Gp (dB) 28 28
D (%) 75 82
1.
2 Features and benefits
Easy power control Integrated double sided ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 600 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1...