BLL6H0514-25
LDMOS driver
transistor
Rev.
5 — 1 September 2015
Product data sheet
1.
Product profile
1.
1 General description
25 W LDMOS
transistor intended for pulsed applications in the 0.
5 GHz to 1.
4 GHz range.
Table 1.
Application information
Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit.
Mode of operation
f
tp
VDS PL Gp
RLin D
(MHz)
(s) (%) (V) (W) (dB) (dB) (%)
pulsed RF
960 to 1215
128 10 50 25 21 10 58
1200 to 1400 300 10 50 25 19 10 50
Pdroop(pulse) (dB) 0.
05 0.
05
tr tf (ns) (ns) 86 86
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
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