BLL6H0514L-130; BLL6H0514LS-130
LDMOS driver
transistor
Rev.
3 — 1 September 2015
Product data sheet
1.
Product profile
1.
1 General description
130 W LDMOS
transistor intended for pulsed applications in the 0.
5 GHz to 1.
4 GHz range.
Table 1.
Application information
Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit.
Mode of operation f
tp
VDS PL Gp RLin D
(MHz)
(s) (%) (V) (W) (dB) (dB) (%)
pulsed RF
960 to 1215 128 10 50 130 19 10 54
1200 to 1400 300 10 50 130 17 10 50
Pdroop(pulse) (dB) 0 0
tr (ns) 15 15
tf (ns) 8 8
1.
2 Features and benefits
Easy power control Integrated ESD protection High flexibility with respect to pulse fo...