BLL8H1214L-250; BLL8H1214LS-250
LDMOS L-band radar power
transistor
Rev.
3 — 1 September 2015
Product data sheet
1.
Product profile
1.
1 General description
250 W LDMOS power
transistor intended for L-band radar applications in the 1.
2 GHz to 1.
4 GHz range.
Table 1.
Test information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Test signal
f
VDS PL
Gp D
tr
tf
(GHz)
(V) (W)
(dB) (%) (ns)
(ns)
pulsed RF
1.
2 to 1.
4 50
250
17 55
15
5
1.
2 Features and benefits
Easy power control Integrated dual side ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency...