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BLS9G3135L-400

Part Number BLS9G3135L-400
Manufacturer Ampleon
Description LDMOS S-band radar power transistor
Published Apr 26, 2018
Detailed Description BLS9G3135L-400; BLS9G3135LS-400 LDMOS S-band radar power transistor Rev. 1 — 6 April 2017 Product data sheet 1. Produc...
Datasheet BLS9G3135L-400




Overview
BLS9G3135L-400; BLS9G3135LS-400 LDMOS S-band radar power transistor Rev.
1 — 6 April 2017 Product data sheet 1.
Product profile 1.
1 General description 400 W LDMOS power transistor for S-band radar applications in the frequency range from 3.
1 GHz to 3.
5 GHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo circuit.
Test signal f VDS PL Gp D (GHz) (V) (W) (dB) (%) pulsed RF 3.
1 to 3.
5 32 425 12 43 1.
2 Features and benefits  High efficiency  Excellent ruggedness  Designed for S-band operation  Excellent thermal stability  Easy power control  Integrated dual sided ESD protection enables excellen...






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