BLC8G20LS-400AV
Power LDMOS
transistor
Rev.
4 — 24 November 2017
Product data sheet
1.
Product profile
1.
1 General description
400 W LDMOS packaged asymmetric Doherty power
transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.
VDS = 32 V; IDq = 800 mA (main); VGS(amp)peak = 0.
4 V, unless otherwise specified.
Test signal
f
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(V)
(W)
(dB) (%)
(dBc)
1-carrier W-CDMA
1805 to 1880
32
85
15.
5 44
31 [1]
1930 to 1990
32
85
15.
5 44
35 [1]
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPC...