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BLC10G18XS-550AVT

Part Number BLC10G18XS-550AVT
Manufacturer Ampleon
Description Power LDMOS transistor
Published Apr 26, 2018
Detailed Description BLC10G18XS-550AVT Power LDMOS transistor Rev. 1 — 21 December 2017 Product data sheet 1. Product profile 1.1 General ...
Datasheet BLC10G18XS-550AVT




Overview
BLC10G18XS-550AVT Power LDMOS transistor Rev.
1 — 21 December 2017 Product data sheet 1.
Product profile 1.
1 General description 550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.
VDS = 28 V; IDq = 800 mA (main); VGS(amp)peak = 0.
95 V, unless otherwise specified.
Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 1805 to 1880 28 91 16.
5 49.
3 29.
4 [1] [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.
9 dB at 0.
01 % probab...






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