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BLC10G27LS-320AVT

Part Number BLC10G27LS-320AVT
Manufacturer Ampleon
Description Power LDMOS transistor
Published Apr 26, 2018
Detailed Description BLC10G27LS-320AVT Power LDMOS transistor Rev. 2 — 1 December 2017 Product data sheet 1. Product profile 1.1 General d...
Datasheet BLC10G27LS-320AVT




Overview
BLC10G27LS-320AVT Power LDMOS transistor Rev.
2 — 1 December 2017 Product data sheet 1.
Product profile 1.
1 General description 320 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board.
Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) 1-carrier W-CDMA 2500 to 2700 28 50 16 D (%) 45 ACPR (dBc) 30 [1] [1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.
2 dB at 0.
01 % probability on CCDF.
1.
2 Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent ther...






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