BLF7G20L-200; BLF7G20LS-200
Power LDMOS
transistor
Rev.
5 — 1 September 2015
Product data sheet
1.
Product profile
1.
1 General description
200 W LDMOS power
transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
f
IDq
VDS PL(AV)
Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1805 to 1880
1620 28 55
18 33 29 [1]
[1] Test signal: 3GPP; test model 1; 64 PDPCH; PAR = 8.
4 dB at 0.
01 % probability on CCDF.
1.
2 Features and benefits
Excellent ruggedness High efficiency Low Rth providing excel...