BLF6G13L-250P; BLF6G13LS-250P(G)
Power LDMOS
transistor
Rev.
5.
— 1 September 2015
Product data sheet
1.
Product profile
1.
1 General description
250 W LDMOS power
transistor intended for CW applications at a frequency of 1.
3 GHz.
Table 1.
Test information
Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.
Test signal
f
VDS
PL(1dB)
Gp
D
(GHz)
(V)
(W)
(dB)
(%)
CW
1.
3 50
250 17
56
1.
2 Features and benefits
Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous...