BLF189XRB; BLF189XRBS
Power LDMOS
transistor
Rev.
1 — 3 October 2017
Product data sheet
1.
Product profile
1.
1 General description
A 1900 W extremely rugged LDMOS power
transistor for industrial pulsed applications in the HF to 150 MHz band.
Table 1.
Application information
Test signal
f
(MHz)
pulsed RF
108
VDS
PL
(V) (W)
50 1900
Gp (dB) 26
D (%) 72.
5
1.
2 Features and benefits
Easy power control Integrated dual sided ESD protection enables class C operation and complete switch
off of the
transistor Excellent ruggedness VSWR 65 : 1 High efficiency Excellent thermal stability Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)...