BLC10M6XS200
Power LDMOS
transistor
Rev.
1 — 5 December 2016
Product data sheet
1.
Product profile
1.
1 General description
200 W LDMOS power
transistor for RF lighting applications at frequencies from 425 MHz to 450 MHz.
The BLC10M6XS200 is designed for high-power CW applications and is assembled in a high performance plastic package.
Table 1.
Typical performance RF performance at VDS = 28 V; IDq = 350 mA; Tcase = 25 C in a class-AB application circuit.
Test signal
f
VDS
PL
Gp
D
(MHz)
(V) (W) (dB) (%)
CW
440
28 200 21
80
1.
2 Features and benefits
High efficiency Easy power control Excellent ruggedness Excellent thermal resistance due to copper flange Integrated ...