BLF0910H6L500; BLF0910H6LS500
Power LDMOS
transistor
Rev.
2 — 13 April 2017
Product data sheet
1.
Product profile
1.
1 General description
A 500 W LDMOS power
transistor for industrial applications at frequency of 915 MHz.
The BLF0910H6L500 and BLF0910H6LS500 are designed for high-power CW applications and are assembled in high performance ceramic packages.
Table 1.
Typical performance RF performance at VDS = 50 V; IDq = 90 mA in a class-AB application circuit.
Test signal
f
VDS
PL
Gp
(MHz)
(V) (W) (dB)
CW [1]
915 50 500 18
CW pulsed [2][3]
915 50 500 19.
5
[1] Tcase = 65 C.
[2] Tcase = 25 C.
[3] tp = 100 s; = 10 %.
D (%) 61 62.
5
1.
2 Features and benefits
High efficie...