DISCRETE SEMICONDUCTORS
DATA SHEET
BF556A; BF556B; BF556C N-channel silicon junction field-effect
transistors
Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 29
Philips Semiconductors
Product specification
N-channel silicon junction field-effect
transistors
FEATURES • Low leakage level (typ.
500 fA) • High gain • Low cut-off voltage.
BF556A; BF556B; BF556C
handbook, halfpage 2
1
g
d s
APPLICATIONS • Impedance converters in e.
g.
electret microphones and infra-red detectors • VHF amplifiers in oscillators and mixers.
DESCRIPTION N-channel symmetrical silicon junction field-effect
transistors in a SOT23 package.
PINNING - SOT23 PIN 1...