REPLACEMENT TYPE :2SB1119
FEATURES Low Collector-Emitter Saturation Voltage VCE(sat) Satisfactory Operation Performances at High Efficiency with the
Low Voltage Power Supply.
MAXIMUMRATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol Value
Collector-Base Voltage
VCBO
-25
Collector-Emitter Voltage
VCEO
-25
Emitter-Base Voltage
VEBO
-5
Collector Current-Continuous
IC
-1
Collector Power Dissipation
PT 500
Junction Temperature
TJ 150
Storage Temperature
Tstg -55to+150
Unit V V V A
mW °C °C
HEB1119(
PNP)
GENERAL PURPOSE
TRANSISTOR
SOT-89 MARKING: BB 1: BASE 2:COLLECTOR 3:EMITTER
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Parameter
Symbol Test ...