DISCRETE SEMICONDUCTORS
M3D124
BFG480W
NPN wideband
transistor
Product specification Supersedes data of 1998 Jul 09 1998 Oct 21
Philips Semiconductors
Product specification
NPN wideband
transistor
FEATURES • High power gain • High efficiency • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capacitance • Linear and non-linear operation.
handbook, halfpage
BFG480W
PINNING PIN 1 2 3 4 emitter base emitter collector DESCRIPTION
3
4
APPLICATIONS • RF front end with high linearity system demands (CDMA) • Common emitter class AB driver.
DESCRIPTION
NPN double polysilicon wideband
transistor with buried layer for low voltage applications in a 4-pin dual-...