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Part Number
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SVF1N60B |
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Manufacturer
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sapcon |
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Description
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N-CHANNEL MOSFET |
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Published
|
May 9, 2018 |
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Detailed Description
|
sapcon®
●Absoolute Maximum Rantings (Tc=25℃)
PARAMETER
SYMBOL VALUE UNIT
Drain-Source Voltage
VDSS
600
V
Drain C...
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Datasheet
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SVF1N60B
|
Overview
sapcon®
●Absoolute Maximum Rantings (Tc=25℃)
PARAMETER
SYMBOL VALUE UNIT
Drain-Source Voltage
VDSS
600
V
Drain Current-continuous
ID
0.
5
A
Drain Current-pulse Gate-Source Voltage
IDM VGSS
2.
0 ±30
A V
Power Dissipation Junction Temperature Storage Temperature
PD Tj TsTg
3.
0 150 -55~+150
W ℃ ℃
SVF1N60B
N-CHANNEL MOSFET
● Electronic Characteristics(Tc=25℃)
CHARACTERISTICS SYMBOL TEST CONDITION MIN Typ MAX UNIT
Drain-Source Voltage
BVDSS ID=250uA;VGS=0V
600
-
-V
Zero Gate Voltage Drain Current
VDS=600V,VGS=0V
IDSS
(TC=25℃）
-
-
10 uA
Gate-body leakage current.
forward
IGSSF VDS=0V,VGS=30V
-
-
100 nA
Gate-body leakage current.
reverse
IGSSR VDS=0V,VGS=-30V
-...
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