BFR 180W
NPN Silicon RF
Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.
2mA to 2.
5mA • fT = 7GHz F = 2.
1dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 180W RDs Q62702-F1490 1=B 2=E 3=C
Package SOT-323
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 8 10 10 2 4 0.
5 mW 30 150 - 65 .
.
.
+ 150 - 65 .
.
.
+ 150 ≤ 790 °C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 126 °C
Junction temperature ...