Production specification
N-Channel Enhancement Mode Field Effect
Transistor BL12N65
FEATURES
DPAK Worldwide Best RDS(on).
High dv/dt Capability.
Excellent Switching Performace.
Pb
Lead-free
Easy to Drive.
100% Avalanche Tested.
APPLICATIONS
N-channel Enhancement mode Effect
Transistor.
Switching Applications.
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VDS Drain-Source Voltage
650 V
VGS ID IDM PD IAR EAS dv/dt
Gate -Source Voltage
Maximum Drain Current(continuous) at TC=25℃ TC=100℃
Drain Current(pulsed)Note1
Power Dissipation at TC=25℃
Avalavche Current,Repetitive or Not-repetitive Single Pu...