Production specification
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
RDS(ON) =9.
3Ω@VGS = 10V.
Pb
Ultra Low gate charge (typical 5.
0nC)
Lead-free
Low reverse transfer capacitance (CRSS = typical 3.
0 pF)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
BL1N60
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VDS Drain-Source voltage
600 V
VGS Gate -Source voltage
±30
V
Continuous Drain current TC=25℃ 1.
2 A ID Continuous Drain current TC=100℃ 0.
76 A
EAS
Single Pulse Avalanche Energy(Note3)
50
EAR
Avalanche Energy,Repetitive(Note2...