Part Number
|
BL3N65 |
Manufacturer
|
GME |
Description
|
N-Channel Power Mosfet |
Published
|
May 18, 2018 |
Detailed Description
|
3A,650V N-Channel Power Mosfet
FEATURES
RDS(ON) =3.8Ω@ VGS = 10V Ultra low gate charge ( typical 10 nC )
Pb
Lead-...
|
Datasheet
|
BL3N65
|
Overview
3A,650V N-Channel Power Mosfet
FEATURES
RDS(ON) =3.
8Ω@ VGS = 10V Ultra low gate charge ( typical 10 nC )
Pb
Lead-free
Low reverse transfer Capacitance ( CRSS = typical 5.
5 pF )
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
Production specification
BL3N65
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source voltage
VGSS
Gate -Source voltage
ID Continuous Drain Current
IDM EAS EAR dv/dt
PD
RθJA
TJ
Pulsed Drain Current
Avalanche Energy
Single Pulsed Repetitive
Peak Diode Recovery dv/dt
Power Dissipation
Thermal resistance,Junction-to-Ambient
Junction Temperature
TOPR, Tstg Ope...
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