2.
5A,800V N-Channel Power Mosfet FEATURES  RDS(ON) =3.
8Ω@ VGS = 10V  Ultra low gate charge ( typical 19 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 11 pF )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL3N80 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage ID Continuous Drain Current IDM EAS dv/dt PD RθJA TJ Pulsed Drain Current Avalanche Energy Single Pulsed Peak Diode Recovery dv/dt Power Dissipation Thermal resistance,Junction-to-Ambient Junction Temperature TOPR, Tstg Operating and Sto...

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