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HGT1S7N60C3DS

Part Number HGT1S7N60C3DS
Manufacturer HARRIS
Description UFS Series N-Channel IGBT
Published May 18, 2018
Detailed Description HGTP7N60C3D, HGT1S7N60C3D, SEMICONDUCTOR HGT1S7N60C3DS January 1997 14A, 600V, UFS Series N-Channel IGBT with Anti-P...
Datasheet HGT1S7N60C3DS




Overview
HGTP7N60C3D, HGT1S7N60C3D, SEMICONDUCTOR HGT1S7N60C3DS January 1997 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features • 14A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time .
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140ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC TO-220AB COLLECTOR (FLANGE) EMITTER COLLECTOR GATE Description The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipo...






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