BCW30LT1 General Purpose
Transistors
PNP Silicon
http://onsemi.
com
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –32 –32 –5.
0 –100 Unit Vdc Vdc Vdc mAdc 1 BASE
COLLECTOR 3
2 EMITTER
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature (1) FR– 5 = 1.
0 0.
75 (2) Alumina = 0.
4 0.
3 Symbol PD 225 1.
8 RθJA PD 556 300 2.
4 RθJA TJ, Tstg 417 –55 to +150 ...