http://www.
ncepower.
com Pb Free Product NCE80H11H NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H11H uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =80V,ID =105A RDS(ON) 6.
5mΩ @ VGS=10V (Typ:5.
8mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Automotive applications ● Hard switched and high frequency circuits ● Uninterr...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)