Part Number
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NCE01P30I |
Manufacturer
|
NCE Power Semiconductor |
Description
|
P-Channel Enhancement Mode Power MOSFET |
Published
|
Jun 2, 2018 |
Detailed Description
|
http://www.ncepower.com
Pb Free Product
NCE01P30I
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE01P30...
|
Datasheet
|
NCE01P30I
|
Overview
http://www.
ncepower.
com
Pb Free Product
NCE01P30I
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE01P30I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
It is ESD protested.
General Features
● VDS =-100V,ID =-30A RDS(ON) 58mΩ @ VGS=-10V (Typ:44mΩ) RDS(ON) 65mΩ @ VGS=-4.
5V (Typ:48mΩ)
● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance
Schematic diagram
Application
● Portable equipment and battery powered systems
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-251 t...
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