N-Channel 30-V(D-S) MOSFET
GENERAL DESCRIPTION
The ME4894 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
ME4894(-G)
FEATURES
● RDS(ON)≦11.
7mΩ@VGS=10V ● RDS(ON)≦18.
2mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON) ●...