REPLACEMENT TYPE : MMBTH10
FEATURES
VHF/UHF
Transistor
HABTH10(
NPN)
GENERAL PURPOSE
TRANSISTOR
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol Value
Collector-Base Voltage
VCBO
30
Collector-Emitter Voltage
VCEO
25
Emitter-Base Voltage
VEBO
3
Collector Current-Continuous
IC
50
Collector Power Dissipation
PC 225
Thermal Resistance Junction to Ambient RθJA
Junction Temperature
TJ
556 150
Storage Temperature
Tstg -55~+150
Unit
V V V mA mW °C/W °C °C
SOT-23 MARKING:3GM 1: BASE 2:EMITTER 3: COLLECTOR
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)
Parameter
Symbol Test conditions
Collector-Base Breakdown Voltage
VCBO
IC=100μA,IE=0
...