CEC3172
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
30V, 26A, RDS(ON) = 20mΩ @VGS = 10V.
RDS(ON) = 32mΩ @VGS = 4.
5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
G S
56 78 Bottom View
DFN3*3
43 21
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 30
VGS ±20
Drain Current-Continuous@RθJc
@RθJA Drain Current-Pulsed a@RθJc
ID 26 ID 9 IDM 92
@RθJA
IDM 36
Maximum Power Dissipation
PD 2.
5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Therm...